View PS2911-1-F3-M-A_7276300.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2 1 f o 1 e g a p 0 0 . 3 . v e r 0 0 3 0 j e 0 1 1 0 s d 8 0 r m a y 2 4 , 2013 the mark shows majo r re vised points. the re vised point s can be ea sily search ed b y co pyi ng an "" in th e pdf file and sp ecifying it in the " f ind what:" field. pin connection (top view) 1. anode 2. cathode 3. emitter 4. collector 4 3 1 2 t e e h s a t a d ps2911-1 high c t r, 4-pin ult r a small pac ka ge fla t -lead photocoupler des cript ion t h e ps2 911 - 1 is a n o p tically c o u p led iso l ator c ont ain i n g a gaas ligh t e m i ttin g d i ode and a n npn silicon p h o t o t ransi st o r i n one pac k a g e f or h i g h d e n s ity m ountin g a pplicatio n s. an ultra sm all flat-lead packa g e has bee n p r ovi ded w h i ch r ealizes a red u c tion i n m ounting area of a b out 30% com p ared with t h e ps28 x x series. fea t ure s ? ultra sm all flat-lead p ac k ag e ( 4 . 6 ( l) 2 . 5 ( w ) 2 . 1 ( h) mm) ? high c u rrent t r ansfe r ra tio (ctr = 200 % typ. @ i f = 1 m a , v ce = 5 v) ? h igh i s o l a tion voltag e ( b v = 2 5 0 0 v r.m . s . ) ? o r d er i n g n u m b e r of tap ing p r o d u ct: ps29 11- 1 - f 3 : 3 500 pcs/r eel ? safety standards ? ul a p p r ove d : n o . e 7 2 422 ? bsi a p pro v e d (bs en 600 6 5 , bs en 609 50) ? d i n e n 6 0 747- 5 - 5 (vd e 0 884 - 5 ) appr o v e d ( o p tion ) applications ? d c / d c c o n v erter ? m odem / p c card r08 d s0 110e j03 00 rev.3.00 may 24, 2013 a bu s i n e ss par tne r o f r e n esas elec t ro nics c orp o r a tio n .
ps2911-1 e r08ds0110ej0300 rev.3.00 page 2 of 12 may 24, 2013 package dimensions (unit: mm) 5.00.2 0.15 +0.1 ?0.05 1.27 2.1 max. 0.40.1 2.50.3 4 3 12 r 4.60.2 0.20.1 4.1 min. marking example assembly lot 3 week assembled no. 1 pin mark (nicked corner) company initial (engraved r) 01 11 601 r *1 *1 bar : pb-free year assembled (last 1 digit) ni/pd/au plating last number of type no. : 11 photocoupler construction parameter min. air distance 4 mm creepage distance 4 mm isolation distance 0.4 mm a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 3 of 12 may 24, 2013 ordering information part number order number solder plating specification packing style safety standard approval application part number *1 ps2911-1 ps2911-1-ax pb-free 50 pcs (tape 50 pcs cut) standard products ps2911-1 ps2911-1-f3 ps2911-1-f3- ax (ni/pd/au) embossed tape 3 500 pcs/reel (ul, bsi approved) ps2911-1-v ps2911-1-v-ax 50 pcs (tape 50 pcs cut) din en 60747-5-5 ps2911-1-v-f3 ps2911-1-v-f3- ax embossed tape 3 500 pcs/reel (vde 0884-5) approved (option) note: *1. for the application of the safety stand ard, following part number should be used. absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit diode forward current i f 50 ma forward current derating i f / c 0.5 ma/ c peak forward current *1 i fp 0.5 a power dissipation p d 60 mw reverse voltage v r 6 v detector collector to emitter voltage v ceo 40 v emitter to collector voltage v eco 5 v collector current i c 40 ma power dissipation derating p c / c 1.2 mw/ c power dissipation p c 120 mw isolation voltage *2 bv 2 500 vr.m.s. total power dissipation p t 160 mw operating ambient temperature t a ? 55 to +100 c storage temperature t stg ? 55 to +150 c notes: *1. pw = 100 s, duty cycle = 1% *2. ac voltage for 1 minute at t a = 25 c, rh = 60% between input and output. pins 1-2 shorted together, 3-4 shorted together. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 4 of 12 may 24, 2013 electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 1 ma 0.9 1.1 1.3 v reverse current i r v r = 5 v 5 a terminal capacitance c t v = 0 v, f = 1 mhz 15 pf transistor collector to emitter dark current i ceo i f = 0 ma, v ce = 40 v 100 na coupled current transfer ratio (i c /i f ) *1 ctr i f = 1 ma, v ce = 5 v 100 200 400 % collector saturation voltage v ce(sat) i f = 1 ma, i c = 0.2 ma 0.13 0.3 v isolation resistance r i-o v i-o = 1 kv dc 10 11 isolation capacitance c i-o v = 0 v, f = 1 mhz 0.4 pf rise time *2 t r v cc = 5 v, i c = 2 ma, r l = 100 5 s fall time *2 t f 10 turn-on time *2 t on v cc = 5 v, i f = 1 ma, r l = 5 k 40 s storage time *2 t s 10 turn-off time *2 t off 120 notes: *1. ctr rank n : 100 to 400 (%) k : 200 to 400 (%) l : 150 to 300 (%) m : 100 to 200 (%) *2. test circuit for switching time input output 90% 10% t r t f t s t d t on t off v cc v out i f i c r l = 100 /5 k 50 pulse input in monitor pw = 100 s duty cycle = 1/10 a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 5 of 12 may 24, 2013 typical characteristics (t a = 25 c, unless otherwise specified) ambient temperature t a (?c) maximum forward current i f (ma) maximum forward current vs. ambient temperature ambient temperature t a (?c) transistor power dissipation p c (mw) transistor power dissipation vs. ambient temperature forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage collector to emitter voltage v ce (v) collector current i c (ma) collector current vs. collector to emitter voltage ambient temperature t a (?c) collector to emitter dark current i ceo (na) collector to emitter dark current vs. ambient temperature collector saturation voltage v ce(sat) (v) collector current i c (ma) collector current vs. collector saturation voltage 80 40 60 20 0 25 50 75 100 0.5 ma/?c 140 100 120 40 60 80 20 25 50 75 100 125 0 ?25 0 25 50 75 100 1 10 100 1 000 10 000 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 v ce = 20 v 40 v 100 10 1 0.1 0.01 0.0 0.5 1.0 1.5 2.0 0?c ?25?c ?50?c +60?c +25?c t a = +100?c ctr = 200% 1 ma i f = 0.5 ma 2 ma 5 ma 68 42 010 20 16 12 8 4 1 ma 0.5 ma i f = 5 ma 2 ma ctr = 200% 18 14 10 6 2 remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 6 of 12 may 24, 2013 frequency response frequency f (khz) normalized gain gv forward current i f (ma) current transfer ratio ctr (%) current transfer ratio vs. forward current normalized to 1.0 at t a = 25?c, i f = 1 ma, v ce = 5 v ambient temperature t a (?c) normalized current transfer ratio ctr normalized current transfer ratio vs. ambient temperature switching time t ( s) load resistance r l () switching time vs. load resistance 1.2 1.4 ?50 1.0 0.8 0.6 0.4 0.2 0.0 ?25 025 50 75 100 0 ?5 ?10 ?15 ?20 ?25 0.1 1 10 100 1 000 100 300 r l = 1 k 0.1 1 10 100 0 100 200 300 400 500 1 10 100 1 000 10 000 v ce = 5 v, n = 3 1k 10k 100 k 1 000 k sample a b c i f = 1 ma, v cc = 5 v, ctr = 200% t s t on t off remark the graphs indicate nominal characteristics. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 7 of 12 may 24, 2013 taping specifications (unit: mm) ps2911-1-f3 1.550.05 4.00.1 2.00.05 4.00.1 1.750.1 2.9 max. 0.3 2.90.1 2.40.1 1.5 +0.1 ?0 5.30.1 5.50.05 12.00.2 tape direction outline and dimensions (tape) outline and dimensions (reel) packing: 3 500 pcs/reel 11.9 to 15.4 outer edge of flange 3302.0 1001.0 2.00.5 21.00.8 2.00.5 13.51.0 13.00.2 r r r r a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 8 of 12 may 24, 2013 recommended mount pad dimensions (unit: mm) 4.14 (0.35) 4.7 5.7 1.27 0.8 0.6 24-r0.1 ( ) : reference value remark this drawing is considered to meet air and outer creepage distance 4.0 mm minimum. all dimensions in this figure must be evaluated before use. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 9 of 12 may 24, 2013 notes on handling 1. recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 260 c or below (package surface temperature) ? time of peak reflow temper ature 10 seconds or less ? time of temperature higher than 220 c 60 seconds or less ? time to preheat temperature from 120 to 180 c 120 30 s ? number of reflows three or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% or less is recommended.) 220?c package surface temperature t (?c) time (s) (heating) to 10 s to 60 s 260?c max. recommended temperature profile of infrared reflow 12030 s (preheating) 180?c 120?c (2) wave soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? preheating conditions 120 c or below (package surface temperature) ? number of times one (allowed to be dipped in solder including plastic mold portion.) ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% or less is recommended.) (3) soldering by soldering iron ? peak temperature (lead part temperature) 350 c or below ? time (each pin) 3 seconds or less ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt% or less is recommended.) (a) soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) cautions ? fluxes avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 10 of 12 may 24, 2013 2. cautions regarding noise be aware that when voltage is applied suddenly between the photocoupler?s input and output or between collector- emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. measurement conditions of current transfer ra tios (ctr), which differ according to photocoupler check the setting values before use, since the forward current conditions at ctr measurement differ according to product. when using products other than at the specified forwar d current, the characteristics curves may differ from the standard curves due to ctr value variations or the like. therefore, check the charact eristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. usage cautions 1. protect against static electricity when handling. 2. avoid storage at a high temperature and high humidity. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 11 of 12 may 24, 2013 specification of vde marks license document parameter symbol spec. unit climatic test class (iec 60068- 1/din en 60068-1) 55/100/21 dielectric strength maximum operating isolation voltage test voltage (partial discharge test, procedure a for type test and random test) u pr = 1.6 u iorm , p d < 5 pc u iorm u pr 570 912 v peak v peak test voltage (partial discharge test, procedure b for all devices) u pr = 1.875 u iorm , p d < 5 pc u pr 1 068 v peak highest permissible overvoltage u tr 4 000 v peak degree of pollution (din en 60664-1 vde0110 part 1) 2 comparative tracking index (i ec 60112/din en 60112 (vde 0303 part 11)) cti 175 material group (din en 60664 -1 vde0110 part 1) iii a storage temperature range t stg ?55 to +150 c operating temperature range t a ?55 to +100 c isolation resistance, minimum value v io = 500 v dc at t a = 25 c v io = 500 v dc at t a max. at least 100 c ris min. ris min. 10 12 10 11 safety maximum ratings (maximum pe rmissible in case of fault, see thermal derating curve) package temperature current (input current i f , psi = 0) power (output or total power dissipation) isolation resistance v io = 500 v dc at t a = tsi tsi isi psi ris min. 150 300 500 10 9 c ma mw a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
ps2911-1 e r08ds0110ej0300 rev.3.00 page 12 of 12 may 24, 2013 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, tran sport and dispose of materials that contain arsenic and ot her such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth. a b usine ss par tn er o f ren esas ele ctro nics c or pora ti on.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ps2911-1 data sheet description rev. date page summary 2.00 may 25, 2006 first edition issued 3.00 may 24, 2013 throughout renesas format is applied to this data sheet. p.1 modification of features p.2 modification of package dimensions modification of marking example p.3 modification of ordering information p.4 modification of electrical characteristics p.7 modification of taping specifications p.9 modification of notes on handling p.11 addition of specification of vde marks license document

▲Up To Search▲

Price & Availability of PS2911-1-F3-M-A

	To Download PS2911-1-F3-M-A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .